Abstract
Boron nitride films were grown for the first time by metal-organic chemical vapour deposition from trimethyl borazine as a single-source organometallic precursor containing boron and nitrogen. Films were deposited at various substrate temperatures using ammonia as a carrier gas and were characterized by IR spectroscopy, X-ray diffraction and scanning electron microscopy; these reveal the presence of crystallites of boron nitride with an sp2- and sp3-bonded structure.
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