Abstract
Boron nitride is a thermally stable and chemically inert material with a wide bandgap. As such, it has potential optoelectronic applications as windows, deep ultraviolet (UV) detectors, or UV light-emitting devices. Since it has a very high surface energy and a lattice parameter which is very similar to diamond, it may also prove to be an excellent substrate material for heteroepitaxial thin film growth of this material. This paper reports the preliminary results of the growth of BN thin films using gas source molecular beam epitaxy. The B source evaporated elemental B produced in a new high temperature effusion cell. The nitrogen source consisted of N ions as well as activated N atoms and molecules obtained from the decomposition of purified N2 by passing it through an electron cyclotron resonance plasma unit designed specifically for molecular-beam epitaxy (MBE) systems. A graded GaN–BN layer deposited on a monocrystalline β-SiC (100) film was used as the substrate for growth of each BN film. Transmission electron microscopy of the latter films showed them to be amorphous; however reflection high-energy electron diffraction (RHEED) patterns obtained during deposition indicated the presence of some microcrystallinity.
Published Version
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