Abstract
Biaxially oriented yttria-stabilized zirconia (YSZ) buffer layers were grown at room temperature by Pulsed Laser Deposition (PLD) and Ion-Beam Assisted Laser Deposition (IBALD) on amorphous substrates. Dependent on deposition parameters, IBALD grown films showed in-plane orientations of up to 20° FWHM (full-width at half maximum). Film in-plane alignment increases with film thickness. Film growth at room temperature without assisting ion-beam was polycrystalline with a growth-rate dependent preferred orientation. (011)- and (001)-oriented films were obtained for growth rates of 10 A/s and 14 A/s, respectively. YSZ film growth orientation was monitored in situ with reflection high-energy electron diffraction. A quantitative analysis of the in-plane orientation of the IBALD grown YSZ film surfaces was established.
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