Abstract
Various applications and fundamental research necessitate the investigation of the effects of in-plane crystal grain boundaries on the transport properties of Bi2Sr2Ca1Cu2O8+δ (2212). In this study, an artificial in-plane crystal grain boundary in 2212 thin film was prepared by depositing thin films on bi-crystal SrTiO3 substrate. At first, growth conditions of 2212 thin films by dc magnetron sputtering were studied; bi-axially textured 2212 single phase thin films were then reproducibly prepared on STO substrate. Jc of the thin film was 1×105A/cm2 at 65K. This value decreased according to the tilt angle of grain boundary.
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