Abstract
BxGa1−xAs layers were grown on GaAs substrates using low-pressure metal-organic vapor-phase epitaxy. Triethylboron, trimethylgallium, and arsine were used as boron, gallium, and arsenic sources. Optimum growth conditions were selected. The layers were studied using X-ray diffraction, secondary-ion mass spectrometry (SIMS), and photocurrent spectroscopy (PCS). The SIMS results showed a uniform boron distribution over the layer thickness. According to the PCS data, the BGaAs band gap decreases as the boron concentration increases.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
