Abstract
We have investigated the initial growth process of $\ensuremath{\alpha}$-Sn films on the In-terminated InSb(111)A-$(2\ifmmode\times\else\texttimes\fi{}2)$ surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Taking the LEED observation and the Sn coverage-dependent integrated intensities of the In $4d$, Sb $4d$, and Sn $4d$ core-level spectra into account, we conclude that the $\ensuremath{\alpha}$-Sn film grows epitaxially by a bilayer mode and that there is no interdiffusion of the substrate atoms as suggested in the literature. Furthermore, the coverage-dependent In $4d$ and Sn $4d$ core levels indicate that the In vacancy site of InSb(111)A-$(2\ifmmode\times\else\texttimes\fi{}2)$ surface is not the preferable Sn absorption site.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
