Abstract
The bulk crystal growth of Al x Ga 1-x N and In y Ga 1-y N was investigated by the Na flux method using NaN 3 , Ga, and Al or In. The crystal size and the yield of the crystal growth were different between Al x Ga 1-x N and In y Ga 1-y N. According to Vegard's law, the largest Al composition x in Al x Ga 1-x N and the largest In composition y in In y Ga 1-y N were 0.22 and 0.7, respectively.
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