Growth of aluminum nitride films at low temperature

Abstract

The epitaxial growth of aluminum nitride films on Al 2O 3 (0 0 0 1) by sputtering is achieved using a 30 nm thick buffer layer of aluminum and titanium nitride. Both buffer layers facilitate epitaxial growth. In particular, an epitaxial film can be deposited at room temperature if the buffer layer is Al. Pole figures of X-ray diffraction elucidate the crystallinity of films.