Abstract
Aluminum catalyzed AlGaAs nanowires were fabricated on Si (111) substrates using metal-organic chemical vapor deposition (MOCVD) technique at a low growth temperature of 450 degrees C. Grown structures were characterized by field emission scanning electron microscope (FE-SEM), energy-dispersive X-ray spectroscopy (EDS) and photoluminescence (PL) techniques. Nanowire clusters were observed all over the substrate. Multiprong root-grown AlGaAs nanowire clusters as well as catalyst particle terminated growth was observed. The growth is explained by Vapor-Solid-Solid (VSS) and Vapor-Solid (VS) growth mechanisms using Al-Si binary phase diagram. EDS and PL measurement confirm the formation of AlGaAs nanowires.
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