Abstract
Polycrystalline aluminum nitride (AlN) films were deposited on Si (111) substrates by radio frequency (RF) magnetron sputtering method in an nitrogen (N2) + argon (Ar) gas mixture. The effect of the preparation conditions- sputtering pressure (p), sputtering power (w), gas mixture (Ar/N2) and post-deposition annealing treatment -on the properties of AlN films were investigated by means of X-ray diffraction (XRD). Highly c-axis oriented AlN films were obtained with optimized growth parameters: p=0.3Pa, w=400w and Ar/N2=2.
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