Abstract
AbstractWe report on the growth of lattice‐matched AlInN/AlGaN distributed Bragg reflectors (DBRs) by metal‐organic vapor phase epitaxy. Growing these structures on a lattice‐matched AlGaN template, the formation of cracks was completely supressed and strain‐related structural degradations were avoided. A 35‐pair DBR provides a peak reflectivity of 99% at a wavelength of ∼360 nm with a stop band width of 18 nm. Thus, the DBRs are well suited for the application in high Q‐factor microcavities designed for the ultraviolet spectral region. However, spatially resolved X‐ray diffraction shows an increase of the DBR period thickness towards the edge of the wafer, leading to a strong red‐shift of the stop band of ∼35 nm. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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