Abstract
AlGaN films with high Al content (Al/Ga ∼5.5) were successfully grown via thermal atomic layer deposition at low temperature (342 °C) using trimethylaluminum and triethylgallium as Al and Ga precursors, respectively, and ammonia as reactant gas. Incorporation of GaN into AlN is evidenced by the dependence of the growth rate on the pulse ratio of AlN and GaN subcycles. Chemical analysis reveals the composition of the AlGaN film and the existence of GaN chemical bonding state irrespective of the pulse ratio. Although the chemical composition of AlGaN film was little affected by the pulse ratio between AlN and GaN cycles, the electrical properties of the films could be modulated. Layer-by-layer growth with close to theoretical dielectric constant could be achieved by the introduction of sufficient number of AlN subcycles. Density functional theory calculations were utilized to assess the surface reaction mechanism of the Al and Ga precursors and ammonia reactant during deposition, which show smaller reactivity of the Ga precursor compared to that of Al would affect the doping ratio of the ALD AlGaN films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.