Abstract
The AgGaS 2 single crystals were grown by chemical transport using either halides or iodine. The transport rate had a maximum in the region of 1 to 6 g-atom/m 3 halogen. The maximum transport rate increased in the order of Cl, Br and I. The relationship between the intensity of PL emission peaks and the amount of transport agent indicated that nonradiative recombination centers were increasingly introduced in as-grown crystals with an increase in the amount of transport agents.
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