Abstract
A thick AlN epilayer with an approximately 1.25-mm thickness was grown on a sapphire substrate by using a mixed source (Al+Ga of very small amount) at around 1150 °C for 2 hours and a mixed-source hydride vapor phase epitaxy (HVPE) method in a simplified reactor interlinked in series with no separation between the source and the growth zones. The simplified reactor was designed to minimize the reaction between quartz and AlCl vapor species of a high partial pressure at around 1150 °C. Thegrowthofthe thickAlN epilayerseemed to be due to theveryhighgrowthrate (maximum value of 600 µm/h) resulting from the minimization of the response distance between the vapor species and the source gases caused by interlinking in series the edge of the source zone with the substrate in the growth zone. The characteristics of the grown thick AlN epilayer were investigated by using cross-sectional scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDS), Raman spectrometry and X-ray diffraction (XRD).
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