Growth of a single-wall carbon nanotube film and its patterning as an n-type field effecttransistor device using an integrated circuit compatible process

Abstract

This study presents the synthesis of a dense single-wall carbon nanotube (SWNT) networkon a silicon substrate using alcohol as the source gas. The nanosize catalysts required aremade by the reduction of metal compounds in ethanol. The key point in spreadingthe nanoparticles on the substrate, so that the SWNT network can be grownover the entire wafer, is making the substrate surface hydrophilic. This SWNTnetwork is so dense that it can be treated like a thin film. Methods of patterningthis SWNT film with integrated circuit compatible processes are presented anddiscussed for the first time in the literature. Finally, fabrication and characteristicmeasurements of a field effect transistor (FET) using this SWNT film are alsodemonstrated. This FET is shown to have better electronic properties than any otherkind of thin film transistor. This thin film with good electronic properties canbe readily applied in the processing of many other SWNT electronic devices.