Abstract
The route to grow InP-based heteroepitaxial structure for quantum cascade laser by molecular beam epitaxy is reported. Optimized growth conditions including substrate temperature, V / III ratio, growth rates, doping levels and interface control are summarized. Double crystal X-ray diffraction and cross-sectional transmission electron microscopy disclose that our grown InP-based heteroepitaxial structure for quantum cascade laser has excellent periodicity and sharp interfaces.
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