Abstract
A novel 10-period SiC/AlN multilayered structure with a SiC cap layeris prepared by low pressure chemical vapour deposition (LPCVD). Thestructure with total film thickness of about 1.45 μm is depositedon a Si (111) substrate and shows good surface morphology with a smallerrms surface roughness of 5.3 nm. According to the secondary ion massspectroscopy results, good interface of the 10 period SiC/AlN structureand periodic changes of depth profiles of C, Si, Al, N components areobtained by controlling the growth procedure. The structure exhibitsthe peak reflectivity close to 30% near the wavelength of 322 nm. Tothe best of our knowledge, this is the first report of growth of theSiC/AlN periodic structure using the home-made LPCVD system.
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