Abstract
Hexagonal ZnO films have been grown on a sapphire(0001) substrate by atmospheric pressure halide vapor phase epitaxy using ZnO buffer layers. The full width at half maximum of the X-ray (0002) diffraction peak for the ZnO films with the buffer layer was found to be smaller than that of the ZnO films without the buffer layer. Reflection high-energy electron diffraction measurements of the former revealed a diffraction pattern similar to that of a single crystal. The photoluminescence spectra showed a strong peak at 370 nm up to 180 K.
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