Abstract
Silicon carbide single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on the Si-face (0001) of 6H-SiC seeds. The growth proceeded under quasi-equilibrium conditions with the growth rate in the range 0.05-0.2 mm/h, that was extremely low as compared to used in standard growth processes. The shape and morphology of the crystallization fronts have been studied. Moreover, defects in crystals and wafers cut from these crystals were examined by optical and atomic force microscopy combined with KOH etching and X-Ray diffraction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.