Abstract
The growth of 4 H-polytype silicon carbide ingots by the modified Lely method on (10\( \bar 1 \)0) seeds has been investigated. It is shown that this seed plane allows intense ingot outgrowth. Single-crystal ingots up to 60 mm in diameter can be obtained at growth rates below 0.6 mm/h. Investigation of the defect structure showed that the grown ingots are practically micropipe-free but contain stacking faults and carbon inclusions.
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