Growth of 4H-SiC epitaxial layers at temperatures below 1500 °C using trichlorosilane (TCS)

Abstract

TCS (SiHCl3) is widely used in the rapid growth of SiC. However, in the study of using TCS to grow 4H-SiC, the growth temperature is mainly concentrated in 1550–1650 °C, and the research on lower growth temperature is lacking. In this study, TCS was used as the silicon precursor and epitaxial layers were grown in the temperature range of 1350–1500 °C. The results show that the single crystal type 4H-SiC epitaxial layer with good quality can be obtained at the growth temperature of 1450 ℃.