Growth of 2D MoS2 on sapphire and mica

Abstract

In this work, we present a study on the epitaxial growth of MoS2 on both sapphire and mica substrates using the Chemical Vapor Deposition (CVD) method. The research focuses on optimizing the growth conditions in order to achieve reproducible results and explore the potential of conventional and Van der Waals epitaxy for synthesizing nanolayers and nanoclusters of transition metal dichalcogenides. By carefully selecting appropriately oriented substrates and performing targeted surface modification, we successfully achieved the desired epitaxial growth. The properties of the obtained structures are thoroughly investigated, with emphasis on their potential applications. This research contributes to the development of scalable and high-quality Transition Metal Dichalcogenide (TMD) growth technique, opening prospects for practical applications in various fields.