Abstract
100-mm-diameter <100> undoped InP single crystals were grown by the vertical gradient freezing (VGF) method using a high-pressure furnace. In order to reduce the temperature fluctuation in the furnace for preventing twinning during crystal growth, we investigated the gas flow in the furnace by a computer simulation. The simulation results showed that the gas flow was quite unstable because of the collision between the gas and the hot-zone or other gas flows. After we developed a hot-zone to control the gas flow, the temperature fluctuation near the seed crystal reduced from ±0.3°C to ±0.03°C. The axial temperature gradient was lower than 10°C/cm and the growth rate was higher than 0.4 mm/h. Twin-free 100-mm-diameter single crystals could be obtained for the first time under these conditions. The average EPD(Etch Pit Density) of the grown crystals was about 2000 cm-2, less than that of the conventional 75-mm-diameter InP LEC (liquid encapsulated Czochralski) crystals.
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