Abstract
AbstractWe report the performance of 1‐eV GaNAsSb‐based photovoltaic samples grown on a Si substrate using molecular beam epitaxy at different As/Ga beam equivalent pressure (BEP) ratios. The light current–voltage curve and spectral response of the samples were measured. The sample grown at an As/Ga BEP ratio of 10 showed the highest energy conversion efficiency with an open circuit voltage (VOC) of 0.529 V and a short circuit current density of 17.0 mA/cm2. This measured VOC is the highest ever reported value in GaNAsSb 1‐eV photovoltaic cell, resulting in the lowest ever reported Eg/q‐VOC of 0.50 eV. The increase in the As/Ga BEP ratio also resulted in an increase in the bandgap‐voltage offset value (Eg/q‐VOC) and a decrease in quantum efficiency up to As/Ga BEP ratio of 18. Copyright © 2015 John Wiley & Sons, Ltd.
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