Growth of (1 0 0)-oriented LaNiO 3 thin films directly on Si substrates by a simple metalorganic decomposition technique for the highly oriented PZT thin films

Abstract

LaNiO 3 (LNO) thin films directly on Si (1 0 0) substrates were prepared by a simple metalorganic decomposition (MOD) technique at annealing temperatures ranging from 450°C to 650°C using a rapid thermal annealing (RTA) method. Highly (1 0 0)-oriented LNO thin films were obtained at low annealing temperature of 550°C. The results indicate the LNO film annealed at 600°C exhibits good metallic property, which is comparable with the LNO films derived from physical techniques. A subsequent deposition of sol–gel derived Pb(Zr 0.52Ti 0.48)O 3 (PZT52/48) thin film on the LNO-coated Si substrate was also found to have a (1 0 0)-oriented texture. The ferroelectric capacitor derived from these films displayed a good P– E hysteresis characteristic.