Growth of β-Ga2O3 nanobelts on Ir-coated substrates

Abstract

We demonstrate the production of gallium oxide (Ga2O3) nanobelts on iridium (Ir)-coated substrates by thermal evaporation of GaN powders. Scanning electron microscopy revealed that the product consisted of nanobelts with widths in the range of 100–700 nm and thicknesses less than 1/5 of the widths. X-ray diffraction and high-resolution transmission electron microscopy indicated that the nanobelts have the single-crystalline monoclinic structure of Ga2O3. The photoluminescence spectrum under excitation at 325 nm showed a broad band with a prominent emission peak around 433 nm.