Abstract
Reflection high-energy electron diffraction and transmission electron microscopy were used to study the growth mode and relaxation of InxGa1−xAs layers, grown by molecular-beam epitaxy, mismatched relative to their In0.53Ga0.47As/InP(001) substrates, as a function of In composition and growth temperature (450 and 525 °C). Weakly mismatched (≊1%) layers grow layer-by-layer and relax through a regular cross-grid type 60° misfit dislocation network. Strongly mismatched (≊3%) layers begin to grow layer-by-layer, then grow with coherent three dimensional (3D) islands and relax through a tangled array of short edge dislocations. For an intermediate mismatch (≊2%), a 3D growth mode is observed at high-temperature (525 °C) which leads to a tangled dislocation array; lowering the growth temperature to 450 °C forces a two-dimensional growth mode producing a regular network of 60° and edge dislocations.
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