Abstract
Abstract The growth mode in migration enhanced epitaxy (MEE) of GaAs(111)B on just (111) oriented substrate was revealed by 0.5 monolayer Ga irradiation per cycle. The RHEED specular beam intensity oscillation observed indicates that the step flow mode tends to occur under growth conditions with enhanced Ga migration length. The realization of step flow mode is effective in reducing the hillock density. The hillock density was reduced by 4 orders of magnitude using MEE with the period where Ga and As 4 beams were cut.
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