Growth models for virtual molecular beam epitaxy

Abstract

Virtual molecular beam epitaxy involves growth simulations on computers where various atomistic kinetic processes such as deposition, diffusion, etc. can be numerically controlled to mimic real growth under precisely defined conditions. This article provides a brief non-mathematical overview of the status of molecular beam epitaxial growth simulations with the emphasis on a minimal stochastic Monte Carlo growth model which simulates deposition as a spatially random atomistic kinetic process and surface diffusion at the growth front as an atomistic Arrhenius activated hopping process. Concepts of generic scale invariance and kinetic roughening, as these apply to molecular beam epitaxy, are discussed qualitatively. A very brief discussion of dynamic scaling and continuum equations pertaining to molecular beam epitaxy is provided emphasizing the physical motivation underlying these ideas.