Growth Model of a GaN Nanorod with the Pulsed-Growth Technique of Metalorganic Chemical Vapor Deposition

Abstract

A theoretical model for the growth process of a GaN nanorod (NR) based on the combined effect of vapor-liquid-solid (VLS) and vapor-solid (VS) modes in pulsed growth with metalorganic chemical vapor deposition is proposed and formulated. In particular, the VS-growth mechanism for forming the gallium-rich line-markers, which provide us with the growth chronology of an NR, is proposed by introducing an incubation time for surface deposition. The evolutions of gallium-droplet base radius and aspect ratio and the increase of precipitated GaN volume during a transition process of a two-section NR are formulated and numerically studied to show the consistent results with experimental data. The relative contributions of the VLS and VS growths in such a transition process are also numerically illustrated. Besides, the experimentally observed decrease of the slant-facet angle from the {1-102}- to {1-101}-plane is modeled, formulated, and numerically simulated. In fitting the numerical results with experimental dat...