Abstract
Abstract Hydrogenated amorphous and microcrystalline silicon films were deposited using the RF glow discharge method. Silane-hydrogen mixtures were used. The conditions under which amorphous and microcrystalline silicon are formed have been investigated with regard to the deposition rate. The deposition rate of good quality amorphous and microcrystalline silicon appeared to be nearly equal. This indicates that the description of the deposition conditions for microcrystalline material, commonly mentioned as a near chemical equilibrium situation, is not complete. Both types of films can be etched in a hydrogen plasma. The etch rate of the amorphous film was about ten times faster compared to the etch rate of microcrystalline films. Based on the results a growth model for the formation of microcrystalline films has been developed.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
