Abstract
The formation of crystallographically oriented and current line oriented pores in n-type InP is reviewed and compared to other semiconductors in the light of some new results. A model for the formation of crystallographically oriented pores is presented that reproduced salient features of this pore type rather well. Impedance data together with their model-based evaluation are given and discussed. Some self-organization features of current line oriented pores and their possible relation to self-induced or externally triggered growth mode transitions between the two pore types conclude the paper.
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