Abstract
Perovskite heteroepitaxy was investigated under various conditions using laser molecular beam epitaxy. Well-controlled BaTiO3∕SrTiO3 heterostructure was studied with in situ reflective high energy electron diffraction and ex situ atomic force microscopy, x-ray diffraction, and transmission electron microscopy. The growth mode map of BaTiO3 thin films was obtained as a function of substrate temperature under 600°C for various laser repetition rates. The effective activation energy of surface migration was determined to be 0.33eV. A mechanism of surface migration in BaTiO3 heteroepitaxy was described for a basic understanding of atomic-scale controlled preparation of ferroelectric heterostructures at low temperature.
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