Abstract
ABSTRACTThe adsorption and decomposition behavior of disilane and digermane are quite similar on the Ge(111) surface. Both precursors are weakly bound at low temperatures, but dissociatively adsorb at temperatures above 150K. Trihydride species are produced and stable at low temperatures, but decompose to di- and monohydride species at slightly higher temperatures. The desorption of hydrogen from the resulting layer is strongly dependent on the Si and Ge composition of the layer.
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