Abstract
Growth mechanisms and thermal stability of ion-beam-induced epitaxial Pd 2Si films are investigated using Rutherford backscattering and channelling techniques. Epitaxial growth of Pd 2Si films was observed at room temperature by argon ion implantation into as-deposited Pd/Si(111) structures and furnace-annealed Pd 2Si(polycrystalline)/Pd 2Si(epitaxial)/Si(111) structures. Some additional experiments to check the growth mechanisms are also presented, in which the implantation energies, substrate orientations and dose rates were changed. Finally, the stability of the ion-beam-induced epitaxial Pd 2Si films on subsequent furnace annealing is studied.
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