Growth Mechanisms and Structural Properties of Lead Chalcogenide Films Grown by Pulsed Laser Deposition

I S Virt,I Ye Lopatynskyi,I O Rudyi,G Luka,Yu Dubov,E Lusakowska,Y Tur

doi:10.1007/s11664-016-4903-9

Abstract

Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al2O3) and on Si covered with a Si3N4 buffer layer. The Si3N4 layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si3N4 was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.

Highlights

An increased interest in AIVBVI compounds stems from their excellent ability to detect infrared (IR) radiation in a wide wavelength range
Our aim was to acquire information about growth mechanisms and crystal structure formation of lead chalcogenides grown by pulsed lased deposition (PLD), which is one of the most prospective methods for lead chalcogenide film epitaxy
The highest structural order of PbS was associated with the smoothest surface morphology, the highest density of dislocations that formed at the film/substrate interface, and the highest compressive strain in the film plane direction

Summary

Introduction

An increased interest in AIVBVI compounds stems from their excellent ability to detect infrared (IR) radiation in a wide wavelength range This explains practical applications of these compounds in various optoelectronic devices.[1,2,3,4,5,6] Lead chalcogenides (PbS, PbSe and PbTe) are especially good materials for mid-wave IR (wavelength of 2.5 lm) detection. They have good chemical and mechanical stability. This unique feature enables preparation of chalcogenide detector systems integrated (Received May 20, 2016; accepted August 20, 2016; published online September 8, 2016)

Objectives

Results

Conclusion