Growth Mechanism of Truncated Triangular III–V Nanowires

Abstract

The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemical vapor deposition (MOCVD) technique was analyzed. The single-crystalline wafers with deposited Au nanoparticles were placed in a growth chamber and the nanowire growth was initiated by the flow of vapor reactants at the growth temperature. GaAs nanowires were grown on a (111)B GaAs substrates in a horizontal-flow MOCVD reactor at a pressure of 100 mbar. The MOCVD results show that the size of the truncated triangular GaAs is larger than the hexagon in the top region of the nanowire indicating the lateral growth of (112) surfaces. The results also show that the type II positions on the (112) surface are the preferred lattice site of Ga atoms. The results also show that the hexagonal-shaped sidewalls are (112) atomic planes belong to (112)A and (112)B surfaces in the zinc blende structures.