Abstract
The growth mechanism of scales of crystalline SiC nanowires (SiC-NWs) obtained by directly evaporating solid carbon on silicon wafer with/without ZnS powders at varying temperatures is being discussed. More aligned SiC-NWs of small size and good crystalline structure were formed when ZnS was used. Random SiC-NWs of big size and poor crystalline structure were obtained at conditions free of ZnS. Furthermore, the improved crystalline structure and increased diameter of SiC-NWs were observed when the higher temperature was employed.
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