Abstract
Hetero-epitaxial growth of YBa 2Cu 3O y (YBCO) crystals on MgO substrates has been investigated by comparing with the homo-epitaxial growth on a YBCO substrate, in order to clarify the initial growth mechanism of the liquid phase epitaxy (LPE). It was found that the slope angle of the growth grain varied with growing in the initial stage of the LPE growth. In the case of the homo-epitaxial growth, the slope angle decreased with growing the crystal. On the other hand, the slope angle increased with growing the crystal in the hetero-epitaxial growth. These phenomena could be explained by considering the difference in step-advancing rates between on the hetero- and homo-epitaxial interfaces. It was found that the hetero-epitaxial interface strongly affected the quality of the LPE film. The guideline for the high quality LPE film by the hetero-epitaxial growth could be obtained.
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