Growth mechanism of phases by interdiffusion and diffusion of species in the niobium–silicon system

Abstract

The integrated diffusion coefficient of the phases and the tracer diffusion coefficients of the species are determined in the Nb–Si system by the diffusion couple technique. The diffusion rate of Si is found to be faster than that of Nb in both the NbSi2 and Nb5Si3 phases. The possible atomic mechanism of diffusion is discussed based on the crystal structure and on available details of the defect concentration data. The faster diffusion rate of Si in the Nb5Si3 phase is found to be unusual. The growth mechanism of the phases is also discussed on the basis of the data calculated in this study.