Abstract
In situ optical emission spectra (OES) have proven to be an important diagnostic tool for monitoring the deposition process of diamond-like hydrogenated amorphous carbon (DL a-C:H) films from rf discharge decompsoition of CH 4 + Ar. The film deposition rate depends on the processing parameters, especially the self-bias between the electrodes. For our system, iamond-like hydrogenated amorphous carbon film growth is governed by a balance between the decomposition and etching process. The implications of the results for the plasma and surface chemistry are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
