Abstract
Growth processes of 7×7 domains from the ‘1×1’ phase on quenched Si(111) surfaces were studied by high temperature STM at a temperature around 340°C, which is more than 100°C lower than temperatures at which previous studies had been carried out. Several metastable structure units were newly found, which play essential roles in the transformation to the dimer adatom stacking fault (DAS) structures. Basic restructuring processes were found to be shifts of dimer lines, which surround a faulted triangle, along and perpendicular to the line.
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