Abstract
The Ge-doped hexagonal cone-shaped GaN nanorods have been synthesized by the VLS process. The variation of N-rich condition and Ga-rich condition in reaction chamber results in the morphology of the Ge-doped GaN nanorods being hexagonal cone-shaped. The Ge-doped hexagonal cone-shaped GaN nanorods exhibit an excellent emission property with typical turn-on electric field as low as 2.93 V/μm, this indicates that the Ge-doped hexagonal cone-shaped GaN nanorods could be well used in cold cathode electron source applications. The photoluminescence spectrum of the Ge-doped hexagonal cone-shaped GaN nanorods indicates it could be applied in blue-violet and ultraviolet photoelectric devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
