Abstract
In this paper, we report the growth of GaAsSb and its crystalline property under various Sb2/As2 flux ratios and growth temperatures. We simulated the incorporation difference between Sb2 and As2 by using a non-equilibrium thermodynamic model. Our study of GaAsSb growth has successfully yielded, high quality InGaAs/GaAsSb Type II superlattice for which the optical properties were characterized by photoluminescence at different excitation power and temperature. A blue-shift in luminescence peak energy with excitation power was observed and was described by a non-equilibrium carrier density model. We measured and analyzed the dependences of peak energy and integrated intensity on temperature. Two thermal processes were observed from intensity dependent photoluminescence measurements.
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