Abstract
Abstract A series of Nd-doped Bi4Ge3O12 (Nd:BGO) crystals have been grown with an improved Bridgman-Stockbarger method; the mechanism of formation of different kinds of defects introduced during growth was studied, and the methods for removing these defects were also discussed. Using our improved growth technology, Nd:BGO crystals with an Nd2O3 doping level as high as 1.5 wt.% were successfully grown. The crystals have good optical quality and a uniformly distributed Nd:ion concentration. The Nd:BGO crystals exhibit medium laser amplification. Compared with Nd:YAG, the Nd:BGO has a broad absorption band at about 800 nm, so they could absorb the pump light of a diode laser more effectively. The Verdet constant of a pure BGO crystal at room temperature was measured with high power laser system to be 0.033 min cm−1 G−1, 27% higher than that of FR-4 magneto-optic glass. Thus Nd:BGO may be a promising laser material that combines the laser properties of Nd ions and the magneto-optic properties of the BGO crystal. A prototype diode laser pumped elf -Q- switched Nd:BGO laser has been demonstrated for the first time by the large Faraday effect in BGO crystals.
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