Abstract
A comparison of growth kinetics of titanium silicide obtained from the reaction of titanium layers on silicon after heating either by conventional thermal annealing or by rapid thermal annealing (RTA) has been undertaken. Very close results have been found for both treatments when sufficient care has been taken to avoid oxygen contamination during any step of the process. This indicates that no enhanced silicidation reaction is due to RTA itself. However, for oxygen contaminated samples, the kinetics remains essentially the same for RTA while it is showed down for furnace annealing. Then in contrast with conventional annealing, RTA is able to reduce the oxygen influence and to give the real kinetics even on samples containing large amounts of oxygen.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
