Abstract
Growth kinetics of three-dimensional (3D) ZnO islands on silicon, sapphire, quartz glass and lime glass substrates, fabricated by radio-frequency magnetron sputtering, were investigated through physical–statistical analysis and the scaling behaviour method. These results show that the 3D islands nucleate with only one atom, and the scattered island size distribution indicates that the strain effect is significant for disturbing the atomic diffusion kinetic process. Gradual strain relaxation through dislocation is confirmed by the decreasing trend in the aspect ratio dependence on the lateral sizes for 3D islands. Additionally, surface roughening also works during strain relaxation.
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