Growth Kinetics of Silicon Thin Film Studied by Hydrogen Radical and Ion Irradiation

Abstract

Silane plasma/solid surface interactions have been simulated through hydrogen neutral and ion beam irradiation onto a thin film produced by silane radical beam condensation on a cooled substrate. The volatile chemical species created by the beam-induced surface reaction has been detected by mass spectrometry. The result showed that the hydrogen radical and ion beam irradiation causes the emission of SiH4 and H2 from the surface when the ion beam is not accelerated. It was also found that pure hydrogen neutrals induce the evolution of SiH4 and H2, and that the accelerated hydrogen ion beam produces Si2H6 molecules on the surface.