Growth Kinetics of Silicon Carbide Chemical Vapor Deposition from Methyltrichlorosilane

Abstract

The epitaxial chemical vapor deposition of SiC on (100) and (111) Si substrates has been conducted in a cold wall furnace from methyltrichlorosilane (MTS) as the single source material. In the temperature range from 1100°C to 1350°C, both surface-reaction-limited growth and diffusion-limited growth have been observed. The activation energy for growth was decreased using a two-step process route in which an intermediate layer was deposited by controlling only the partial pressure of the MTS.