Abstract
The growth kinetics and desorption behavior of indium (In) atoms grown on high index Si(112) surface at different substrate temperatures has been studied. Auger electron spectroscopy analysis revealed that In growth at room temperature (RT) and high substrate temperature (HT) ∼250°C follows Frank–van der Merve growth mode whereas at temperatures ≥450°C, In growth evolves through Volmer–Weber growth mode. Thermal desorption studies of RT and 250°C grown In/Si(112) systems show temperature induced rearrangement of In atoms over Si(112) surface leading to clusters to layer transformation. The monolayer and bilayer desorption energies for RT grown In/Si(112) system are calculated to be 2.5eV and 1.52eV, while for HT-250°C the values are found to be 1.6eV and 1.3eV, respectively. This study demonstrates the effect of temperature on growth kinetics as well as on the multilayer/monolayer desorption pathway of In on Si(112) surface.
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